發佈日期:2012-08-15
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更新日期:2021-03-18
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研究專長與興趣 》》》
太陽能電池
光檢測器
光電材料與元件
ULSI製程技術
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黃俊達 特聘教授
Distinguished Professor Jun-Dar
Hwang
科技部學術研發網
學術成果連結(NCYU)
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教師研究室:電物二館 A18B-307(2)
研究室電話:(05) 271-7958
電子信箱:jundar@mail.ncyu.edu.tw
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研究實驗室:微電子實驗室
實驗室位置:電物一館
A15-305
實驗室電話:(05) 271-7857
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I. 主要學歷:
畢/肄業學校
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國別
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主修系所
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學位
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起訖年月
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國立台灣科技大學
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中華民國
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電機系
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學士
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1984年09月~1986年06月
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國立成功大學
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中華民國
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電機研究所
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碩士
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1988年09月~1990年06月
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國立成功大學
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中華民國
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電機研究所
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博士
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1991年09月~1996年01月
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II. 現職及與專長相關之經歷:
服務機關
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服務部門/系所
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職稱
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起訖年月
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現職
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國立嘉義大學
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電子物理學系
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特聘教授
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2014年01月迄今
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國立嘉義大學
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理工學院
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院長
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2020年08月迄今
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經歷
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聯華電子公司
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開發處
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工程師
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1990年07月~1991年08月
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中洲科技大學
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電子工程系
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副教授
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1996年02月~2001年01月
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大葉大學
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電機系
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副教授
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2001年02月~2005年07月
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大葉大學
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電機系
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教授
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2005年08月~2008年07月
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國立嘉義大學
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應用物理學系
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副教授
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2008年08月~2009年07月
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國立嘉義大學
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應用物理學系
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教授
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2009年08月~2010年01月
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國立嘉義大學
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電子物理學系
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教授兼系主任與所長
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2010年02月~2013年01月
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III. 近期代表著作︰
年.月
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作者、題目、期刊名稱、卷數、頁數、年份
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2009.01
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Jun-Dar Hwang, C. J. Lin,
"High 366/254 nm Rejection Contrast GaN MIS Photodetectors Using Nano
Spin-Oxide," IEEE Electron Device Letters 30, 27 (2009). [Abstract]
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2009.06
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C H Lan, J D Hwang, S J Chang, Y
C Lin, Y C Cheng, W J Lin, J C Lin, K J Chang, "Nitride-based
metal-insulator-semiconductor capacitors with liquid-phase deposition oxide
and (NH4)2Sx pretreatment prepared on sapphire substrates," Semiconductor
Science & Technology 24, 075026 (2009). [Abstract]
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2009.08
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Chung Yuan Kung, Jun Dar Hwang, Yu Hong
Chen, Pan Sheu Chen, and Hsun Joung Chan, "Investigation of Electrical
Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors
Prepared by Liquid-Phase Deposition of Silicon Dioxide," Japanese
Journal of Applied Physics 48, 086503 (2009). [Abstract]
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2009.12
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J. D. Hwang, Y. H. Chen, and P. S. Chen,
"Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2
Grown on Strained SiGe," Electrochemical and Solid-State Letters 13, H45
(2010). [Abstract]
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2010.02
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J. D. J. D. Hwang, and C. H. Chou, "On the origin
of leakage current reduction in TiO2 passivated porosus silicon
Schottky-barrier diode,'' Applied Physics Letters 96, 063503 (2010). [Abstract]
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2010.04
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C. H. Lan, J. D. Hwang, S. J. Chang,
Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, and Y. L. Lin,
"(NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer,"
Journal of The Electrochemical Society 157, H613 (2010). [Abstract]
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2010.08
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C. H. Lan, J. D. Hwang*, S. J. Chang,
J. S. Liao, Y. C. Cheng, W. J. Lin, and J. C. Lin, "Investigations of
ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous
solutions zinc nitrate and zinc acetate," Electrochemical and
Solid-State Letters 13, H363 (2010). [Abstract]
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2010.08
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J.D. Hwang*, D.S. Lin, Y.L. Lin, W.T. Chang, G.H.
Yang, "Electrical properties of metal-oxide-semiconductor capacitors
using liquid-phase deposited silicon-dioxide gate dielectric on
sulfur-passivated germanium," Thin Solid Films 519, 833 (2010). [Abstract]
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2010.12
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J.D. Hwang*, S.B. Hwang, C.H. Chou, Y.H. Chen,
"Investigation of opto-electronic properties on gradient-porosity porous
silicon layer," Thin Solid Films 519, 2313 (2011). [Abstract]
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2011.01
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J.D. Hwang*, E.H. Zhang, "Effects of a
a-Si:H layer on reducing the dark current of 1310 nm metal–germanium–metal
photodetectors," Thin Solid Films 519, 3819 (2011).[Abstract]
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2011.08
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Wen-Tse Chang, Gwo-Huei Yang, Jun-Dar Hwang, Jun-Hung
Lin,"High-quality nano spin-oxide for possible applications in
metal–oxide semiconductor field-effect transistor", Micro & Nano
Letters 6, 686–688 (2011). [Abstract]
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2011.11
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Gwo-Huei Yang, Wen-Tse Chang, Jun-Dar Hwang, Jun-Hung
Lin, Yu-Hung Chen, "Effect of N2-annealing on n-type Si
metal–oxide–semiconductor capacitors by using liquid-phase deposition
SiO2", Micro & Nano Letters 6, p. 944 (2011). [Abstract]
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2011.12
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Jun-Dar Hwang, Li-Shang
Lin, Ting-Jen Hsueh, and Sheng-Beng Hwang, "Large-Grain Epitaxial
Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with
Different Hydrogen Dilution", Electrochemical and Solid-State Letters 15
(3), H69-H71 (2012). [Abstract]
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2012.01
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Gow-Huei Yang, Jun-Dar Hwang, Yu-Hung
Chen, and Chien-Mao Chan, "Comparison of electrical and optical
properties of Al/SiO2/n-GaN and ITO/SiO2/n-GaN metal–oxide–semiconductor
photodetectors", Micro & Nano Letters 7(1), 95 (2012). [Abstract]
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2012.03
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Jun Dar Hwang, Gwo Huei
Yang, Yu Hung Chen, Wen Tse Chang, Ju Hung Lin," Optical characteristics
of an Al/nano-SiO2/n-type Si MOS photodetector by using spin-coating
deposited oxide," Micro & Nano Letters, Vol. 7, pp. 252–255 (2012).[Abstract]
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2012.03
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J. D. Hwang*, Y. H. Chen, "Carrier transport
mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres
annealing hydrothermal seed-layer", Thin Solid Films 520, 5409-5412
(2012). [Abstract]
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2012.04
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J. D. Hwang*, Y. H. Chen, "Effects of
pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si
heterojunction diodes grown through hydrothermal method", Thin Solid
Films 520, 5294-5299 (2012). [Abstract]
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2012.07
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Jun-Dar Hwang, Gow-Huei
Yang, Yu-Hung Chen, Wen Tse Chang, Jun-Hung Lin, Jun-Chin Liu, "
Photodetective characteristics of Al/LPD-oxide/n-type Si MOS with tunneling
structures", Micro & Nano Letters 7, 697-699 (2012). [Abstract]
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2014.05
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J. D. Hwang*, M. J.
Lai, H. Z. Chen, and M. C. Kao, "Au-Mediated Surface Plasmon
Enhanced Ultraviolet Response of p-Si/n-ZnO Nanorods
Photodetectors," IEEE Photo. Tech. Lett. 26, 1023-1026, (2014
May). [Abstract]
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2014.05
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J. D. Hwang*, F. H. Wang, C. Y. Kung, M. J.
Lai, and M. C. Chan,"Annealing effects of Au nanoparticles on the
surface-plasmon enhanced p-Si/n-ZnO nanorods heterojunction
photodetectors," J. Appl. Phys. 115, 173110:1-5 (2014 May). [Abstract]
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2014.05
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Jun-Dar Hwang*, Din-Han
Wu, and Sheng-Beng Hwang, "Enhanced Ultraviolet Response of
P-Si/SiOx/i-ZnO/n-ZnO Photodetectors," IEEE Photo. Tech. Lett. 26,
1081-1084, (2014 May).[Abstract]
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2014.10
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J. D. Hwang*, W. J. Yan, and
J.H. Chen, " Study of Growing Zinc Oxide on Polycrystalline
Silicon/Glass Substrate Prepared by Aluminum-induced crystallization of
Amorphous Silicon ," Mater. Sci. Semiconductor Process 26 , pp.677-680
(2014 October).
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2014.12
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J. D. Hwang*, W. J. Yan, "
Using aluminum-induced polycrystalline silicon to enhance ultraviolet to
visible rejection ratio of ZnO/Si heterojunction photodetectors ," Solar
Energy Materials and Solar Cells 134, pp.227-230(2015 January).
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2015.03
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J. D.Hwang* , F. H.Wang, C. Y. Kung, and M. C.
Chan, "Usingthe Surface Plasmon Resonance of Au Nanoparticles to
EnhanceUltravioletResponse of ZnO Nanorods-Based Schottky-Barrier
Photodetectors," IEEE Trans. Nanotechnology 14, 318-321(2015 March).
(SCI)
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2015.05
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J. D. Hwang*, D. H. Wu, and S. B. Hwang, "
Inserting an i-ZnO layerto increase the performance of p-Si/n-ZnO
heterojunction photodetectors, " Mater. Sci.Semiconductor Process 39,
pp. 132-135 (2015 May).
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2015.09
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J.D. Hwang*, J.S. Lin (林俊碩), and S.B.
Hwang, "Annealing effects on MgZnO films and applications in
Schottky-barrier photodetectors," J. Phys. D: Appl. Phys 48, pp.
405103:1-6 (2015 September). (SCI)
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2015.10
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J. D. Hwang*, Y. D. Chan, and T. C. Chou,
"Wavelength-Band-tuning photodiodes by using various metallic
nanoparticles," Nanotechnology 26, pp. 465202:1-6 (2015 December).
(SCI).
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2016.01
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J. D. Hwang*, S. Y. Wang (王生佑), and S. B.
Hwang,"Using oxygen-plasma treatment to improve the photoresponse of
Mg0.18Zn0.82O/p-Si heterojunction photodetectors," J. Alloy. compd. 656,
pp.618-621 (2016 January).(SCI :3.133) [Abstract]
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2016.08
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J. D. Hwang*, G. S. Lin," Single- and
dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal
structure by varying the bias voltage," Nanotechnology 27, 375502:1-6,
(2016 August).(SCI : 3.440)[Abstract]
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2016.12
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Jun-Dar Hwang*, Lee-Chi Luo, Sanjaya Brahma, Kuang-Yao
Lo, "The effect of high concentration of phosphorus in aluminum-induced
crystallization of amorphous silicon films," Thin Solid Films 618,
50-54, (2016 December) (SCI:1.879)[Abstract]
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2017.01
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J. D. Hwang* , G. S. Lin, and S. B. Hwang,
"Effects of MgxZn1-xO Thickness on the Bandwidth of
Metal-Semiconductor-Metal Band-Pass Photodetectors," IEEE Transactions
on Electron Devices Volume 64 Issue 1 ,195-199 (2017 January) (SCI) [Abstract]
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2017.03
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J.D. Hwang* and Y.C. Chang, "Effects of
oxygen-plasma treatment on the structure and optical properties of
MgxZn1−xOfilms," Materials Science in Semiconductor
Processing Volume 64 Pages 6-9(June 2017) (SCI) [Abstract]
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2017.07
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J. D. Hwang* and Y. C. Chang," Enhancing
the Ultraviolet/Visible Rejection Ratio of MgxZn1-xO
Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment,"
IEEE Transactions on Electron Devices Volume 64 Issue 8, 3234-3238. (2017
July) (SCI) [Abstract]
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2017.07
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J. D. Hwang*, C. C. Yang, and C. M. Chu,"
MgZnO/ZnO Two-Dimensional Electron Gas Photodetectors Fabricated by
RF-Sputtering," ACS Applied Materials & Interfaces , 23904-23908.
(2017 July) (SCI) [Abstract]
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2017.09
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J. D. Hwang and T. H. Ho, "Effects of
oxygen content on the structural, optical, and electrical properties of NiO
films fabricated by radio-frequency magnetron sputtering," Materials
Science in Semiconductor Processing Vol.71, 396-400. (2017 September) (SCI)[Abstract]
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2018.04
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J. D. Hwang*, J. S. Lin and S. B. Hwang, "Mg
thermal diffusion behavior on the band modulation of MgxZn1-xO/ZnO
metal-semiconductor-metal photodetectors," Journal of Materials
Science Semiconductor Process 83, 18-211 (2018 April). (SCI) [Abstract]
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2018.06
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Jun-Dar Hwang*, Hsin-Yu
Chen, Yu-Huang Chen, and Ting-Hsiu Ho, "Effect of nickel diffusion and
oxygen behavior on heterojunction Schottky diodes," Nanotechnology 29,
295705:1-7 (2018 June). (SCI) [Abstract]
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2018.08
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Jun-Dar Hwang*, H. C. Chiu, and C. I. Jiang,
"MgxZn1-xO/ZnO quantum well photodetectors
fabricated by radio-frequency magnetron sputtering", IEEE Photonics
Technology Letter , pp. 1583-1586 (2018 August). (SCI) [Abstract]
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2019.01
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Jun-Dar Hwang* and Wei-Ming Lin ,
"Enhancing the photoresponse of p-NiO/n-ZnO heterojunction photodiodes
using post ZnO treatment", IEEE Trans. Nanotechnology 18, 126-131. (2019
January) (SCI)。 [Abstract]
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2019.03
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J. D. Hwang*, H. C.
Chiu, and C. I. Jiang, "High-performance organic/inorganic hybrid
ultraviolet p-NiO/PVK/n-ZnO heterojunction photodiodes with a poly
(N-vinylcarbazole) insertion layer", J. Mater. Chem. C. 7,
pp. 3529-3534 (March 2019) (SCI)。 [Abstract]
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2019.09
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Jun Dar Hwang* and Jhong Yung
Jiang,"Barrier thickness dependence of MgxZn1-xO/ZnO quantum well (QW)
on the performance of p-NiO/QW/n-ZnO photodiode",RSC Advances 9, pp.
29967-29972 (September 2019)[Abstract]
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2020.01
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J.D. Hwang*, C.I. Jianga, and S.B. Hwang,
"P-NiO/n-ZnO heterojunction photodiodes with an MgZnO/ZnO quantum well
insertion layer," Mater. Sci. Semiconductor Process. 105, pp. 104711:1-6
(January 2020) (SCI)。 [Abstract]
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2020.05
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Jun-Dar Hwang*, Wang-Ting Hsu, Bo-Yu Lin, Yu-Ting Hwang, and Shr-Ting
Wang," Effects of Ag-doping on the characteristics of AgxNi1-xO
transparent conducting oxide film and their applications in heterojunction
diodes", J. Phys. D: Appl. Phys. 53, pp. 275107:1-7 (May 2020). (SCI) [Abstract]
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*Corresponding author
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完整著作資料 請查詢 科技部 研究人才查詢系統:https://arsp.most.gov.tw/NSCWebFront/modules/talentSearch/talentSearch.do?action=initSearchList
本校教師研究成果 亦可查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_wres2x0a.aspx
IV. 開設課程(教學大綱)︰
其他學期之課程 請查詢 校務行政系統:https://web085003.adm.ncyu.edu.tw/pub_course.aspx
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