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last update time 2023/05/22
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:::* Home > Faculty > Faculty_List > Jun-Dar Hwang

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Distinguished Professor

Jun-Dar Hwang

Personal Website

Office Room: Electrophysics Building II, A18B-307

Office Phone: +886-5-271-7958

E-Mail:  jundar@mail.ncyu.edu.tw

Laboratory:  Microelectronics Lab

Lab Room: Electrophysics Building I, A15-305

Lab Phone: +886-5-271-7857

I. Education:

School Country Department Degree Duration
National Taiwan University of Science and Technology Republic of China (Taiwan) Department of Electrical Engineering Bachelor 1984.09 ~ 1986.06
National Cheng Kung University Republic of China (Taiwan) Department of Electrical Engineering Master 1988.09 ~ 1990.06
National Cheng Kung University Republic of China (Taiwan) Department of Electrical Engineering Doctor 1991.09 ~ 1996.02

II. Position and Experience:

Institution Department Title Duration

Current Position

National Chiayi University Department of Electrophysics Distinguished Professor 2014.01~
National Chiayi University Department of Electrophysics Professor & Chairman of Department 2010.02 ~ 2013.02

Past Experience

Sampo Electronics Corporation Research Engineer 1983.07 ~ 1984.08
Chung-Shan Institute of Science and Technology Testing Engineer 1986.06 ~ 1987.12
United Microelectronics corporation Research Engineer 1990.07 ~ 1991.08
Chung-Chou Institute of Technology Department of Electronic Engineering Associate Professor 1996.02 ~ 2001.01
Da-Yeh University Department of Electronic Engineering Associate Professor 2001.02 ~ 2006.07
Da-Yeh University Department of Electrical Engineering Professor 2006.08 ~ 2008.07
National Chiayi University Department of Applied Physics Associate Professor 2008.08 ~ 2009.07
National Chiayi University Department of Applied Physics Professor 2009.08 ~ 2010.07

III. Research Fields:

　Optoelectronic Devices, Solar cell, Semiconductor processing and technology, Semiconductor Devices

IV. Selected Recent Publications:

Year.Month Authors, Title, Journal, Volume, Page, Year
2009.01 Jun-Dar Hwang, C. J. Lin, "High 366/254 nm Rejection Contrast GaN MIS Photodetectors Using Nano Spin-Oxide," IEEE Electron Device Letters 30, 27 (2009). [Abstract]
2009.06 C H Lan, J D Hwang, S J Chang, Y C Lin, Y C Cheng, W J Lin, J C Lin, K J Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)2Sx pretreatment prepared on sapphire substrates," Semiconductor Science & Technology 24, 075026 (2009). [Abstract]
2009.08 Chung Yuan Kung, Jun Dar Hwang, Yu Hong Chen, Pan Sheu Chen, and Hsun Joung Chan, "Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide," Japanese Journal of Applied Physics 48, 086503 (2009). [Abstract]
2009.12 J. D. Hwang, Y. H. Chen, and P. S. Chen, "Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO2 Grown on Strained SiGe," Electrochemical and Solid-State Letters 13, H45 (2010). [Abstract]
2010.02 J. D. J. D. Hwang, and C. H. Chou, "On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode,'' Applied Physics Letters 96, 063503 (2010). [Abstract]
2010.04 C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao, and Y. L. Lin, "(NH4)2Sx-Treated AlGaN MIS Photodetectors with LPD SiO2 Layer," Journal of The Electrochemical Society 157, H613 (2010). [Abstract]
2010.08 C. H. Lan, J. D. Hwang*, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, and J. C. Lin, "Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate," Electrochemical and Solid-State Letters 13, H363 (2010). [Abstract]
2010.08 J.D. Hwang*, D.S. Lin, Y.L. Lin, W.T. Chang, G.H. Yang, "Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium," Thin Solid Films 519, 833 (2010). [Abstract]
2010.12 J.D. Hwang*, S.B. Hwang, C.H. Chou, Y.H. Chen, "Investigation of opto-electronic properties on gradient-porosity porous silicon layer," Thin Solid Films 519, 2313 (2011). [Abstract]
2011.01 J.D. Hwang*, E.H. Zhang, "Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal–germanium–metal photodetectors," Thin Solid Films 519, 3819 (2011). [Abstract]
2011.08 Wen-Tse Chang, Gwo-Huei Yang, Jun-Dar Hwang, Jun-Hung Lin,"High-quality nano spin-oxide for possible applications in metal–oxide semiconductor field-effect transistor", Micro & Nano Letters 6, 686–688  (2011). [Abstract]
2011.11 Gwo-Huei Yang, Wen-Tse Chang, Jun-Dar Hwang, Jun-Hung Lin, Yu-Hung Chen, "Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2", Micro & Nano Letters 6, p. 944 (2011). [Abstract]
2011.12 Jun-Dar Hwang, Li-Shang Lin, Ting-Jen Hsueh, and Sheng-Beng Hwang, "Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution", Electrochemical and Solid-State Letters 15 (3), H69-H71 (2012). [Abstract]
2012.01 Gow-Huei Yang, Jun-Dar Hwang, Yu-Hung Chen, and Chien-Mao Chan, "Comparison of electrical and optical properties of Al/SiO2/n-GaN and ITO/SiO2/n-GaN metal–oxide–semiconductor photodetectors", Micro & Nano Letters 7(1), 95 (2012). [Abstract]

2012.03

 Jun Dar Hwang, Gwo Huei Yang, Yu Hung Chen, Wen Tse Chang, Ju Hung Lin," Optical characteristics of an Al/nano-SiO2/n-type Si MOS photodetector by using spin-coating deposited oxide," Micro & Nano Letters, Vol. 7, pp. 252–255 (2012).[Abstract]
2012.03 J. D. Hwang*, Y. H. Chen, "Carrier transport mechanism on ZnO nanorods/p-Si heterojunction diodes with various atmospheres annealing hydrothermal seed-layer", Thin Solid Films 520, 5409-5412 (2012). [Abstract]
2012.04 J. D. Hwang*, Y. H. Chen, "Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method", Thin Solid Films 520, 5294-5299 (2012). [Abstract]
2012.07 Jun-Dar Hwang, Gow-Huei Yang, Yu-Hung Chen, Wen Tse Chang, Jun-Hung Lin, Jun-Chin Liu, " Photodetective characteristics of Al/LPD-oxide/n-type Si MOS with tunneling structures", Micro & Nano Letters 7, 697-699 (2012). [Abstract]
　 *Corresponding author

For the full publication list, please consult the website of National Science Council: https://nscnt07.nsc.gov.tw/WRS/

To see the research results of the teachers in our school, you can also consult the website: https://web085003.adm.ncyu.edu.tw/
You can login without the need of entering the id number and password.

V. Lectured Courses (Teaching Outlines):

For the course tables and outlines in the other semesters, please consult the website: https://web085003.adm.ncyu.edu.tw/
You can login without the need of entering the id number and password.


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